New technique to produce quicker, smaller memories developed
Published On: April 4, 2017 |
Researchers have developed an innovative new technique to produce the quickest, smallest, highest capacity memories for flexible and transparent applications.
The engineering experts from the University of Exeter have said it could pave the way for a “future golden age of electronics”. They have developed the new memory using a hybrid of graphene oxide and titanium oxide.
According to the researchers, their devices are low-cost and environmentally friendly to produce, as well as being perfectly suited for use in flexible electronic devices such as folding smartphones, computer and television screens, and even intelligent clothing.
They added that these devices could also potentially offer a cheaper and more adaptable alternative to 'flash memory', which is currently used in many common devices such as memory cards, graphics cards and USB computer drives.
The research team has claimed that these innovative new devices could revolutionise how data is stored, as well as usher in a new age in speed, efficiency and power for flexible electronics.
Professor David Wright, electronic engineering expert from the University of Exeter, said that using graphene oxide to produce memory devices has been achieved before, but that those instances typically saw very large and slow memories, which were aimed at the cheaper end of the electronics goods market.
"Our hybrid graphene oxide titanium oxide memory is, in contrast, just 50 nanometres long and eight nanometres thick and can be written to and read from in less than five nanoseconds – with one nanometre being one billionth of a metre and one nanosecond a billionth of a second."
Professor Monica Craciun, co-author of the work, added that improving data storage is the “backbone of tomorrow's knowledge economy, as well as industry on a global scale”. She explained that her team’s work offers the opportunity to “completely transform” graphene oxide memory technology, and what it has to offer.
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